International Forum on Wide Bandgap Semiconductors China

(IFWS)

Call for Papers

Date: November 1st-3rd, 2017

Venue: Hilton Beijing Capital Airport, Beijing, China

https://www.ifws.org.cn

International Forum on Wide Bandgap Semiconductors China（IFWS）is a global high level forum sponsored by the China Advanced Semiconductor Industry Innovation Alliance (CASA) aiming at promoting collaborative innovation of industries including wide band gap semiconductor materials, equipments, devices and related applications. This forum will focus on the roadmap, application needs, integrated innovation of wide bandgap semiconductor technology and other topics, divided into several sessions for in-depth discussions.

GENERAL CHAIRS

Umesh K. MISHRA--Member of United States National Academy of Engineering, Co-founder of Transphorm, Distinguished professor at University of California, Santa Barbara

CAO Jianlin--President for ISA, Ex-Vice Minister of The Ministry of Science and Technology

PROGRAM COMMITTEE

Tech Chair

ZHENG Youdou--Professor at the School of Electronic Science & Engineering, Nanjing University, Academician of Chinese Academy of Sciences

Tech Co-Chairs

LIU Ming--Professor at Institute of Microelectronics of Chinese Academy of Sciences, Academician of Chinese Academy of Sciences

ZHANG Rong--President of Shandong University， Professor at Nanjing University

Kevin J. CHEN--Professor at the Hong Kong University of Science and Technology

QIU Yufeng--Deputy Director of Global Energy Interconnection Research Institute, State Grid

ZHANG Guoyi--Professor at Peking University

SHEN Bo--Deputy Director and Professor at School of Physics, Peking University

HOST

China Advanced Semiconductor Industry Innovation Alliance

Zhongguancun Science Park Shunyi Park Management Committee

SUPPORTERS

Ministry of National Science and Technology of China

National Development and Reform Commission

Ministry of Industry and Information Technology

Beijing Municipal Government

The forum has a long-term cooperation with the IEEE. High quality papers contributed to IFWS will be published in the Xplore IEEE electronic library after selection.

CONTENTS

S1：SiC Materials and Devices

SiC power electronic devices are known to have advantages including high efficiency, high switching frequency and high operating temperature. They show great potential in applications such as renewable energy generation, electric vehicles and others. The continuous progress of SiC power electronic devices technology will play an important role in the development of power electronics. The topics of this session cover silicon carbide substrate, homoepitaxy, power electronic device. Well-known experts from home and abroad will be invited and latest research results will be presented in the session to demonstrate recent advances in SiC power electronic device technologies and applications.

Scope：

•Sic Crystal Growth and Processing

•Sic Homogeneity Epitaxy

•Defect Control and Characterization of SiC Materials

•Structure Design and Simulation of SiC Power Electronic Chip

•SiC Power Electronics Chip Technology

•Reliability of SiC Power Electronics

•Testing and Characterization of SiC Power Electronics

•Other New Technologies of SiC Power Electronic Chip

Sub-forum Chair：

•SHENG Kuang--Professor at Zhejiang University

Sub-forum Members：

•XU Xiangang--Professor at Shandong University

•CHEN Xiaolong--Professor at Institute of Physics, Chinese Academy of Sciences

•ZHANG Yuming--Dean and Professor at Xidian University

•ZHANG Anping--Professor at Xi'an Jiaotong University

•BAI Song--Professor at Nanjing Electronic Devices Institute

•WANG Dejun--Professor at Dalian University of Technology

S2: GaN Power Electronic Devices

GaN as one of the wide band-gap semiconductors has several advantages such high breakdown voltage, high switch frequency and low channel resistance, and can be fabricated by silicon integrated circuit process with ultra-low cost and ultra-high technology maturity. GaN power electronic devices have great application potential in the new generation of electric power conversion and management system with high efficiency and small size such as electric vehicles, industrial motors, etc. Besides SiC and GaN power electronic devices, the other novel wide band-gap semiconductors, such as Diamond, Ga2O3, etc, also have recently achieved technological breakthroughs. The topics in this session cover the technologies of lateral or vertical GaN epi-structures on large-size substrate, GaN power devices with novel structures and processes, the design and manufactrue of GaN power modules with high speed and high efficiency, reliability and applications in GaN-based power system, etc. Well-known experts from home and abroad will be invited to give talks in this session. The latest progress in power electronic devices based on GaN will be presented.

Scope：

•GaN Based Heterostructure Epitaxial Growth and Defects, and Stress Control on Large Size Substrate?GaN based Power Electronic Devices Technology

•GaN substrate Meterials and Homogeneous Epitaxial with Thick Film

•GaN Device Packaging Technology

•GaN Power Electronics Application

•Market Research of GaN Power Electronic Technology

Sub-forum Chair：

•Kevin J. CHEN--Professor at the Hong Kong University of Science and Technology

•XU Ke--Director of Nano-characterization Lab in Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences; President of Suzhou Nanowin Co. Ltd.

Sub-forum Members：

•LI Shunfeng--Deputy Director of Dongguan Institute of Optoelectronics, Peking University

•CHEN Peng--Professor at Nanjing University

•ZHANG Guoqi--Chair Professor for Micro/Nanoelectronics System Integration and Reliability of Delft University of Technology, IEEE Fellow

•YAN Wende--Vice President of ZTE Corporation

S3: Application and Reliability of Power Electronic Device Packaging for SiC, and GaN

Recently there have been significant advances made in wide bandgap (WBG) semiconductor power electronics devices. These devices have great potential for a wide range of applications, such as renewable energy generation, electric grid, electric vehicles, charging piles, power conversion and management systems, industrial motors, etc. Compared with silicon devices, WBG devices have lower specific on-state and switching losses for a required blocking voltage and are capable of working at higher junction temperatures. These superior device characteristics offer power electronics engineers new opportunities to design power conversion systems that are smaller, lighter, more efficient, and lower cost by increasing the switching frequency, current density, and device junction temperature. However, before the advantages of WBG devices can be fully realized, innovative packaging and integration technologies have to be developed to better address challenges like parasitic-resulted oscillations, EMI noise, thermal management, high-temperature operation, and reliability. This session covers a broad range of topics related to the design, process, materials, and physics of failure of WBG device packaging and integration. The session serves as an open forum for attendees and speakers to interact and share their technical approaches and findings. Renowned domestic and international experts working in the field will be invited to present their vision, research efforts, and future directions. Below is a non-exclusive list of topics covered in this session

Scope：

•Package designs and demonstration of WBG power devices or modules with low parasitics and EMI;

•WBG driver designs and packaging;

•High-density integration of WBG power devices or modules;

•Integration technologies for paralleling WBG devices;

•Thermal management technologies for WBG deviceor module packaging;

•Materials for WBG packaging;

•Reliability of WBG devices and their packaging;

•Online monitoring technologies for WBG power electronics;

•Other New Technologies for WBG device packaging and integration.

Sub-forum Chairs：

•LU Guoquan--Professor at Tianjin University

•ZHANG Guoqi--Chair Professor for Micro/Nanoelectronics System Integration and Reliability of Delft University of Technology, IEEE FellowSub-forum

Members：

•YU Kunshan--Secretary-General of China Advanced Semiconductor Industry Innovation Alliance

•ZHAO Zhengming--Professor at Tsinghua University

•YANG Fei--Senior Engineer at Global Energy Interconnection Research Institute, State Grid

•ZHANG Anping--Professor at Xi'an Jiaotong University

•BAI Song--Professor at Nanjing Electronic Devices Institute

•TAO Guoqiao--Wafer-Level-Reliability Expert at Ampleon Netherlands B.V., the Netherlands

•WANG Dejun--Professor at Dalian University of Technology

S4: RF Technology based on Wide Bandgap Semiconductors

Featured with High frequency, high efficiency and high power, the wide band gap semiconductor GaN based RF devices are now representing the great potential for the new generation of mobile communication technology. The breakthrough in this specific area is the new strategic highland of global semiconductor industry. The topics in this session cover GaN microwave devices and MMIC epitaxy, model, design and manufacturing, reliability and applications in mobile communications. The domestic and foreign well-known experts will be invited to give talks in this session. The latest progress of microwave devices and applications in wide bandage semiconductor will be presented.

Scope：

•High Efficiency GaN Microwave Device Technology

•Process and Device Reliability of GaN Microwave Devices

•GaN Epitaxial Technology for High Efficiency Microwave Device

•GaN Monolithic Microwave IC Design

•Large Signal Equivalent Circuit Modeling and Physical Modeling of GaN Microwave Devices

•Application of GaN devices and circuits in mobile communication

Sub-forum Chairs：

•CAI Shujun--Professor and the Deputy Director of the 13th Research Institute of China Electronics Technology Group Corporation

•ZHANG Naiqian--Chairman of Dynax Semiconductor Inc.

Sub-forum Members：

•CHEN Tangsheng--Chief Scientist of China Electronics Technology Group Corporation, Deputy Chief Engineer of No.55 Research Institute of CETC

•LIU Xinyu--Deputy Director of Institute of Microelectronics of Chinese Academy of Sciences

•LIU Jianli--PA Chief Engineer at ZTE Corporation

•ZHANG Jincheng--Professor at Xidian University

•TAO Guoqiao--Wafer-Level-Reliability Expert at Ampleon Netherlands B.V., the Netherlands

S5: Wide Bandgap Semiconductor Solid-State Ultraviolet Devices

The wide bandgap semiconductors have unmatchable advantages and great potential for ultraviolet (UV) devices compared with other semiconductor materials. This session focuses on the UV light-emitting materials represented by AlGaN and GaN, UV sensing materials represented by SiC and GaN, design and epitaxy of high-efficiency quantum structures, as well as novel fabrication and manufacturing technologies for UV devices such as light-emitting diodes, laser, photodetector, etc. This session also covers the advanced packaging materials and technology for UV devices, including the promotion mechanisms of light extraction, thermal management and device reliability, etc. In this session, domestic and foreign well-known experts from both academy and industry will be invited to deliver the latest most important progress in materials, devices, packaging and applications at all levels of wide bandgap semiconductors in UV light emitting and sensing areas.

Scope：

•AIN and Other Novel Substrate Materials for UV Optoelectronic Devices

•Design and Epitaxial Growth of Nitride Semiconductor UV Light Emitting and Detecting Materials

•P - Type Doping of AlGaN epitaxial films with High Al Composition?High Efficiency Solid State Ultraviolet Light Emitting Devices

•High Sensitivity Ultraviolet Detection and Imaging Devices

•Light Extraction, Thermal Management and Reliability of Packaging and Modules of UV Light Source?New Progress of Ultraviolet Light Source and Detection Application

Sub-forum Chairs：

•SHEN Bo--Deputy Director and Professor at School of Physics, Peking University

•ZHANG Yun--Professor and Assistant to Director of the Institute of semiconductors, Chinese Academy of Sciences

Sub-forum Members：

•Jay LIU--Executive Vice President & CTO of ShineOn (Beijing) Technology

•LU Hai--Professor at School of Electronics Science and Engineering of Nanjing University

S6: Ultra-Wide Bandgap Semiconductor and Other New Semiconductor Materials

In recent years, people continue to get a breakthrough in the research and application of ultra-wide bandgap semiconductor materials represented by diamond, gallium oxide, aluminum nitride, boron nitride, etc. The ultra-wide bandgap semiconductor materials have a larger bandgap, higher thermal conductivity and better material stability, which have significant advantages and great potential for developing new generation of deep ultraviolet optoelectronic devices, high voltage/power electronic devices and other significant applications. This session focuses on the fabrication of the ultra-wide bandgap semiconductor materials, process technology, key equipment and device applications, aims at building a high-quality exchange platform for the communication among industry, academia and capital, discusses the new technologies and new trends of the ultra-wide bandgap semiconductor materials and devices. The session will invite famous experts to present the latest advances in the research and application of the ultra-wide bandgap semiconductors and other new wide bandgap semiconductors.

Scope：

•Key equipment technology for fabrication of the ultra-wide bandgap semiconductors

•Fabrication and material study of the ultra-wide bandgap semiconductors

•Power electronics technology of the ultra-wide bandgap semiconductors

•Optoelectronic device technology of the ultra-wide bandgap semiconductors

•Research and application of other new semiconductor materials

Sub-forum Chairs：

•LIU Ming--Professor at Institute of Microelectronics of Chinese Academy of Sciences, Academician of Chinese Academy of Sciences

•ZHANG Rong--President of Shandong University， Professor at Nanjing University

Sub-forum Members：

•TAO Xutang--Director of State Key Lab of Crystal Materials, Shandong University

•WANG Hongxing--Professor at Xi'an Jiaotong University

•XU Jun--Professor at Tongji University

FOR SSLCHINA 2017（CONCURRENT EVENTS）

P201- Materials and Equipment Technologies

P202- Technologies for Chip, Packaging and Modules

P203- Technologies for Reliability and Thermal Management

P204- Driver, Intelligence and Control Technologies

P205- LED Lighting in Bio-Agriculture

P206- Light Quality and Lighting for Health and Medicine

P207- Novel Display and Lighting Technologies

REVIEW PROCEDURE

1. Authors must submit extended abstracts in advance.

2. Authors will be informed of paper acceptance with categories of Oral Presentation, Poster Presentation and Conference Proceedings.

3. Authors prepare final submissions depending on the following status:

1)Oral Presentations: Authors need to prepare paper and presentation files (PPT/PDF)

2)Poster Presentations: Authors need to prepare paper and poster files (The Technical Program Committee will audit the posters and inform the authors. Authors need to prepare posters according to the template and bring the hardcopy posters to the designated Poster Display area for wall mounting).

3)Conference Proceedings: Authors should prepare the papers. Authors have to prepare final papers according to the guidelines and given template.

Note:

1)The template can be downloaded from the paper contribution platform of the forum:https://www.ifws.org.cn/en/paper/Authors are required to prepare papers and other materials based on the provided template in time to pass the review successfully.

2)High quality papers Contributed to SSLCHINA will be published in the Xplore IEEE electronic library after selection.

PAPER REQUIREMENTS

1.Basic Requirements

1)The paper should not have been published in other technical publications or by other technical conferences.

2)Prominent theme, distinct content, accurate data, rigorous discussion, clear conclusion and adopted legal measurement unit.

2.Abstract Submission

Authors are required to submit extended abstracts according to the paper format template given on the conference website.

3.Paper Format

The paper should be written according to the paper format template given on the conference website. The papers should adopt Word format. The total pages of the paper are limited to 4.

4.Language of Abstracts, Posters and Papers

1)Abstracts/posters/papers have to be in Standard English.

2)Both Chinese and English are acceptable for oral presentations, but only English can be used for the presentation files (PPT/PDF) and conference proceedings.

Note: No commercial promotions allowed for specific companies and products; otherwise, the papers will not be selected for oral presentations and conference proceedings.

IMPORTANT DATES & METHOD OF SUBMISSION

1.Deadline for abstract submission:July 30th, 2017

2.Paper acceptance notification:August 15th, 2017

3.Deadline for full paper submission:September 30th,2017

4.Full paper acceptance notification:October 15th,2017.

5.Deadline for softcopy submission of presentationsPPT and posters:October 25th, 2017.

For further questions about the paper submission, please contact us,

Lu BAI

Telephone:010-82387600-602

Email:papersubmission@china-led.net